STMicroelectronics STP60NF06 N-Channel Power MOSFET 60V 60A TO-220
STP60NF06 Power MOSFET: 60V, 60A, low 0.016Ω Rds(on). For high-efficiency DC-DC converters in telecom, computing & industrial uses.
The STMicroelectronics STP60NF06 is a high-performance N-channel Power MOSFET, part of the STripFET™ II generation. Built using a unique proprietary process, it is engineered to deliver superior efficiency in demanding switching applications. Its key design focus is the minimisation of input capacitance and gate charge, making it an excellent primary switch for advanced, high-efficiency isolated DC-DC converters commonly used in telecommunications and computer systems.
This component is also ideally suited for any application with low gate charge drive requirements. It offers improved switching performance and lower power dissipation, helping to meet the stringent efficiency demands of modern electronic designs. The MOSFET boasts exceptional dv/dt capability and is 100% avalanche tested, ensuring high reliability and robustness in the field. Its characterisation is application-oriented, providing dependable performance in real-world scenarios.
Key Features & Specifications
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 60A
- Drain-Source On-State Resistance (Rds(on)): 0.016Ω @ 10V
- Gate-Source Threshold Voltage (Max): 2V
- Power Dissipation: 110W
- Package / Case Style: TO-220 (Through-Hole)
- Number of Pins: 3
- Maximum Operating Temperature: 175°C
With its combination of low resistance, high current handling, and optimised switching characteristics, the STP60NF06 is a reliable choice for power designers seeking to enhance system performance and efficiency.
- Primary switch in high-efficiency isolated DC-DC converters
- Telecom applications
- Computer and server power supplies
- Industrial power systems
- Technology: STripFET™ II Power MOSFET
- Channel Type: N Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 60A
- Drain Source On-State Resistance (Rds(on)): 0.016Ω @ 10V
- Gate Source Threshold Voltage (Max): 2V
- Power Dissipation: 110W
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- No. of Pins: 3 Pins
- Operating Temperature Max: 175°C
- Special Feature: Exceptional dv/dt capability
- Special Feature: 100% Avalanche tested
- Special Feature: Application oriented characterisation
- Weight: 2 grams
- Dimensions (H x W x D): 43 mm x 33 mm x 15 mm
- Drain Source On State Resistance: 0.016ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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