STMicroelectronics STP3N150 Power MOSFET, N-Channel, 1.5kV, TO-220
STP3N150 Power MOSFET: 1.5kV, 2.5A, TO-220 package. 100% avalanche tested for robust industrial & power management use.
The STMicroelectronics STP3N150 is an advanced N-channel Power MOSFET engineered for demanding industrial and power management applications. Its PowerMESH™ technology incorporates a unique strip layout-based MESH OVERLAY™ process, which minimises intrinsic capacitances and gate charge (Qg). This innovative design delivers performance that matches or exceeds that of comparable standard parts from other manufacturers, ensuring high efficiency and reliability in your circuits.
A key feature is its robust 1.5 kV drain-source voltage rating, making it suitable for high-voltage switching scenarios. The device is 100% avalanche tested, guaranteeing ruggedness and the ability to withstand unexpected voltage spikes. Its high-speed switching capability is ideal for applications requiring fast transitions and minimal power loss.
Housed in a standard TO-220 through-hole package, it offers excellent thermal performance with a power dissipation rating of 140W and a high operating temperature of up to 150°C. The package provides a creepage distance of 5.4mm, enhancing safety and reliability in designs with high-voltage isolation requirements.
Key Specifications & Features
- Technology: Utilises PowerMESH™ and MESH OVERLAY™ process for superior performance.
- Robustness: 100% avalanche tested for enhanced durability.
- Switching: High-speed switching capability for efficient power control.
- Safety: Creepage distance path of 5.4mm for improved isolation.
- Package: TO-220 through-hole case for easy mounting and good heat dissipation.
- Thermal Performance: Maximum power dissipation of 140W.
With its combination of high voltage tolerance, proven reliability, and advanced manufacturing technology, the STP3N150 is a dependable choice for designers seeking a high-performance power switching solution.
- Industrial applications
- Power management systems
- High-voltage switching circuits
- Power supply units (PSUs)
- Channel Type: N Channel
- Drain Source Voltage (Vds): 1.5 kV
- Continuous Drain Current (Id): 2.5 A
- Drain Source On-State Resistance (Rds(on)): 9 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage (Max): 4V
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Number of Pins: 3 Pins
- Power Dissipation: 140W
- Operating Temperature Max: 150°C
- Creepage Distance Path: 5.4mm
- Weight: 2.04 grams
- Dimensions (H x W x D): 43 mm x 33 mm x 15 mm
- Drain Source On State Resistance: 9ohm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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