STMicroelectronics STP30NF10 N-Channel Power MOSFET, 100V 35A, TO-220

The STMicroelectronics STP30NF10 is a high-performance N-channel Power MOSFET designed for demanding industrial applications. Manufactured using a unique 'single feature size'™ strip-based process, this transistor delivers an exceptional combination of low on-resistance and high current handling in a robust TO-220 package.

It offers a very low drain-source on-state resistance (Rds(on)) of just 0.045 ohms at 10V, enabling efficient power switching with minimal losses. With a continuous drain current (Id) rating of 35A and a drain-source voltage (Vds) of 100V, it is built to handle significant power loads reliably. The device features an exceptional dv/dt capability and is 100% avalanche tested, ensuring rugged performance and durability under stressful operating conditions.

The improved gate charge characteristics contribute to lower power dissipation, helping systems meet modern efficiency requirements. Its through-hole TO-220 case style allows for easy mounting and excellent thermal management when used with a heatsink, supporting a maximum power dissipation of 115W. This MOSFET is characterised with a focus on real-world application performance, providing remarkable manufacturing reproducibility for consistent quality.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 35 A
• Drain-Source On-State Resistance (Rds(on)): 0.045 Ω @ 10V
• Gate-Source Threshold Voltage (Max): 3 V
• Maximum Power Dissipation: 115 W
• Package / Case: TO-220 (Through Hole)
• Number of Pins: 3
• Maximum Operating Temperature: +175 °C

Ideal for power supply design, motor control, and other industrial power conversion circuits, the STP30NF10 provides a reliable and efficient switching solution from a trusted semiconductor manufacturer.