STMicroelectronics STP20NM50 Power MOSFET N-Channel 550V 20A TO-220

The STMicroelectronics STP20NM50 is a high-performance N-channel Power MOSFET that utilises the advanced MDmesh™ and PowerMESH™ technologies. This device combines a multiple drain process with a horizontal layout, delivering an outstandingly low ON-resistance of just 0.25 ohm, which translates to excellent power efficiency and reduced heat generation.

Engineered for robust operation, it features impressively high dV/dt capability and is 100% avalanche tested, ensuring reliable performance under demanding conditions. The MOSFET also boasts a low input capacitance and gate charge, facilitating faster switching speeds and simpler drive circuitry, alongside a low gate input resistance.

Designed for a broad industrial temperature range, it operates reliably from -65°C to 150°C, making it suitable for challenging environments. Its through-hole TO-220 package is a standard and robust format, offering good thermal performance for heat dissipation via an attached heatsink.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 550 V
• Continuous Drain Current (Id): 20 A
• Drain-Source ON-Resistance (Rds(on)): 0.25 Ω @ 10V
• Gate-Source Threshold Voltage (Max): 4 V
• Maximum Power Dissipation: 192 W
• Package / Case: TO-220 (Through-Hole)
• Pin Count: 3 Pins
• Operating Junction Temperature: -65°C to +150°C

This component is a cornerstone for efficient power management solutions, offering a blend of high voltage handling, current capacity, and switching performance that is essential for modern electronic designs.