St MicroElectronics STP12NM50 N-Channel Power MOSFET, 550V, 12A, TO-220

The St MicroElectronics STP12NM50 N-Channel Power MOSFET is a 550V, 12A through-hole transistor in a TO-220 package, built on MDmesh technology that combines the multiple drain process with the PowerMESH horizontal layout.

Overview

This N-channel MOSFET offers a continuous drain current of 12A and an on-state resistance of 0.35 ohm. The MDmesh design provides extremely low on-resistance, high dv/dt capability and excellent avalanche characteristics. The proprietary strip technique supports superior dynamic performance, making the device suitable for demanding industrial applications. The device is 100% avalanche tested.

Key Features

• Low input capacitance and gate charge, which reduce switching losses
• High dv/dt and avalanche capabilities for robust performance
• Low gate input resistance for improved switching speed
• 160W power dissipation with a 150°C maximum operating temperature
• 3-pin configuration with a standard TO-220 footprint

Applications

The STP12NM50 is suitable for a wide range of industrial applications, including power supplies, inverters and motor control circuits. Its through-hole TO-220 package and standard footprint facilitate integration into existing circuits, supporting high-efficiency power conversion in high-power designs.

Technical Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 550V
• Continuous Drain Current (Id): 12A
• On-State Resistance (Rds(on)): 0.35 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 160W
• Transistor Case Style: TO-220

Choose the St MicroElectronics STP12NM50 when a 550V, 12A N-channel power MOSFET in a through-hole TO-220 package is required for power conversion designs.