STMicroelectronics STP11NK40Z N-Channel Power MOSFET 400V 9A TO-220
STP11NK40Z Power MOSFET: 400V, 9A, 0.55 ohm Rds(on). High dV/dt, avalanche tested. For industrial power management.
The STMicroelectronics STP11NK40Z is a SuperMESH™ N-channel, Zener-protected Power MOSFET, representing a significant advancement in power semiconductor technology. It is manufactured using ST's highly optimised, strip-based PowerMESH™ layout, which dramatically reduces ON-resistance while maintaining exceptional robustness.
This MOSFET is engineered for the most demanding industrial and power management applications, featuring an extremely high dV/dt capability that ensures reliable performance in harsh electrical environments. Every unit is 100% avalanche tested, guaranteeing superior ruggedness and durability under transient voltage conditions. The design also minimises gate charge and intrinsic capacitances, contributing to faster switching speeds and reduced switching losses, which enhances overall system efficiency.
Built with excellent manufacturing repeatability, the STP11NK40Z offers consistent and predictable performance across production batches. It operates reliably across a broad junction temperature range from -55°C to 150°C, making it suitable for applications exposed to extreme thermal conditions. Its robust TO-220 through-hole package provides a reliable and industry-standard footprint for easy mounting and excellent thermal dissipation.
Key features include a low drain-source ON-state resistance of just 0.55 ohms, which minimises conduction losses and heat generation. With a high continuous drain current rating of 9A and a drain-source voltage capability of 400V, this component is a powerful and efficient choice for designers seeking to optimise their power circuits.
- Power Management systems
- Industrial applications and controls
- Switch-mode power supplies (SMPS)
- Motor drives and controllers
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 400 V
- Continuous Drain Current (Id): 9 A
- Drain-Source On-State Resistance (Rds(on)): 0.55 ohm
- Rds(on) Test Voltage: 10 V
- Gate-Source Threshold Voltage (Max): 3.75 V
- Power Dissipation: 110 W
- Technology: SuperMESH™, Zener-protected
- Package / Case Style: TO-220
- Mounting Type: Through Hole
- Number of Pins: 3
- Operating Junction Temperature Range: -55°C to 150°C
- Key Feature: Extremely high dV/dt capability
- Key Feature: 100% Avalanche tested
- Key Feature: Minimised gate charge
- Key Feature: Very low intrinsic capacitances
- Key Feature: Excellent manufacturing repeatability
- Dimensions (approx.): 33mm (W) x 15mm (D) x 43mm (H)
- Weight: 2 grams
- Drain Source On State Resistance: 0.55ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- of Pins: 3Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
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