STMICROELECTRONICS Power MOSFET N-Channel 600V 6A TO-220FP
High-efficiency 600V N-channel Power MOSFET with SuperMESH tech, 6A current, 1.2ohm Rds(on). Ideal for industrial power applications.
The STMICROELECTRONICS STP6NK60ZFP is a high-performance N-channel Zener-protected Power MOSFET, engineered to deliver exceptional efficiency and reliability in demanding industrial applications. Developed using advanced SuperMESH™ technology, this component represents an optimisation of the established strip-based PowerMESH™ layout, resulting in a significant reduction in on-resistance and superior performance characteristics.
This MOSFET is designed with a special focus on enhancing dv/dt capability, ensuring robust operation in the most challenging electrical environments. It features minimised gate charge and lower power dissipation, directly addressing modern requirements for improved energy efficiency and thermal management in power conversion systems.
Key Features & Benefits
- SuperMESH™ Technology: Provides very low on-resistance (Rds(on)) for reduced conduction losses and higher efficiency.
- High dv/dt Ruggedness: Offers extremely high dv/dt capability, ensuring stability and reliability in applications with fast voltage transitions.
- Zener-Protected: Includes integrated Zener protection for enhanced durability and protection against voltage spikes.
- Avalanche Tested: Each device is 100% avalanche tested, guaranteeing consistent performance under high-energy stress conditions.
- Optimised Switching: Minimised gate charge allows for faster switching speeds and reduced drive requirements.
With a high drain-source voltage rating of 600V and a continuous drain current of 6A, this TO-220FP packaged MOSFET is a versatile and robust solution for designers seeking to improve the performance and reliability of their power electronics.
- Industrial power supplies and converters
- Motor control and drive circuits
- Switch-mode power supplies (SMPS)
- Lighting ballasts and control
- Channel Type: N Channel
- Drain Source Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain Source On-State Resistance (Rds(on)): 1.2ohm @ 10V
- Transistor Case Style: TO-220FP
- Transistor Mounting: Through Hole
- Gate Source Threshold Voltage (Max): 3.75V
- Power Dissipation: 32W
- Number of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Weight: 10.433 grams
- Drain Source On State Resistance: 1.2ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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