STMicroelectronics Power MOSFET, N-Channel, 500V, 10A, TO-220

The STMicroelectronics Power MOSFET is an N-channel metal-oxide-semiconductor field-effect transistor engineered for high-efficiency power switching and amplification. With a robust drain-source voltage (Vds) rating of 500V and a continuous drain current (Id) of 10A, this component is built to handle significant power loads in demanding circuits. Its low drain-source on-state resistance (Rds(on)) of just 0.48ohm at a 10V test voltage minimises conduction losses, leading to improved overall system efficiency and reduced heat generation.

Housed in the industry-standard TO-220 through-hole package, this MOSFET offers excellent thermal performance and ease of mounting for prototyping and production. The package features 3 pins and supports a maximum power dissipation of 125W, ensuring reliable operation under high-stress conditions. The gate-source threshold voltage is a maximum of 3.75V, making it compatible with common logic-level and standard drive circuits.

Designed for a wide operating temperature range up to 150°C, this transistor is suitable for use in environments where thermal management is critical. Its through-hole mounting provides a strong mechanical and electrical connection, ideal for applications where vibration resistance and durability are paramount. This component is a fundamental building block for designers and engineers seeking a dependable, high-performance switching solution.