STMicroelectronics PNP Bipolar Transistor, 300 V, 500 mA, TO-225AA

The STMicroelectronics PNP Complementary Power Transistor is a high-performance -300V silicon planar device, specifically engineered for medium power linear and switching applications. This bipolar junction transistor (BJT) offers exceptional reliability and efficiency, making it a preferred choice for demanding electronic circuits.

One of the standout features of this component is its fast switching times, paired with a very low saturation voltage. This combination effectively reduces both switching and conduction losses, ensuring optimal performance and energy efficiency in your designs. Furthermore, the device boasts a well-controlled hFE parameter, which significantly increases overall circuit reliability and stability.

Designed as a complementary PNP partner to its corresponding NPN transistor, it allows for seamless integration in push-pull and complementary output configurations. Housed in a TO-225AA through-hole package, it provides robust physical durability and straightforward mounting on printed circuit boards.

Key Specifications:

• Transistor Polarity: PNP
• Maximum Collector Emitter Voltage: 300 V
• Continuous Collector Current: 500 mA
• Power Dissipation: 20.8 W
• Minimum DC Current Gain (hFE): 240
• Maximum Operating Temperature: 150 °C

Whether you are designing industrial power supplies, audio amplifiers, or motor control systems, this transistor delivers the consistent performance and thermal management required for modern electronics.