STMicroelectronics N Channel Power MOSFET 800V 4.3A TO-220FP
STMicroelectronics 800V N Channel Zener-protected Power MOSFET, 4.3A, 2.4 ohm, TO-220FP Through Hole. SuperMESH technology.
This STMicroelectronics N Channel Power MOSFET is a Zener-protected device developed using advanced SuperMESH™ technology. This evolution of the well-established strip-based PowerMESH™ layout significantly reduces on-resistance while ensuring excellent dv/dt capability, making it highly suitable for the most demanding switching applications.
Designed specifically to meet today's challenging efficiency requirements, this Power MOSFET features an improved gate charge and lower overall power dissipation. It has been 100% avalanche tested and boasts very low intrinsic capacitance, ensuring reliable and consistent performance alongside very good manufacturing repeatability.
Handling Precautions
Please note that this is an ESD sensitive device. Proper precautions must be taken while handling the component to prevent damage from electrostatic discharge.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 800 V
- Continuous Drain Current (Id): 4.3 A
- Drain Source On State Resistance: 2.4 ohm
- Case Style: TO-220FP
- Mounting Type: Through Hole
- Power Dissipation: 30 W
- Gate Source Threshold Voltage Max: 3.75 V
- Rds(on) Test Voltage: 10 V
- Number of Pins: 3
- Operating Temperature Max: 150 °C
- Dimensions: 43 mm x 33 mm x 15 mm
- Weight: 2 g
- For industrial applications
- For demanding high-efficiency applications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.3A
- Drain Source On State Resistance: 2.4 ohm
- Case Style: TO-220FP
- Mounting Type: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3.75V
- Power Dissipation: 30W
- Number of Pins: 3
- Operating Temperature Max: 150°C
- Special Feature: Zener-protected
- Special Feature: SuperMESH technology
- Special Feature: 100% avalanche tested
- Special Feature: Very low intrinsic capacitance
- Special Feature: ESD sensitive device
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2 grams
- Transistor Case Style: TO-220FP
- Transistor Mounting: Through Hole
- of Pins: 3Pins
- SVHC: Lead (21-Jan-2025)
Always follow local regulations and product guidance.
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