STMICROELECTRONICS N-Channel Power MOSFET, 60V, 55A, TO-220
High-current 55A N-channel Power MOSFET from STMicroelectronics. 60V, low 0.018Ω Rds(on), in TO-220 package for audio & power circuits.
The STMICROELECTRONICS STP55NF06L is a high-performance N-channel Power MOSFET, representing the latest development in STMicroelectronics' unique Single Feature Size™ strip-based process. This advanced manufacturing technology yields a transistor with an extremely high packing density, resulting in a very low on-state resistance, rugged avalanche characteristics, and enhanced manufacturing reproducibility.
Designed for demanding power management applications, this MOSFET offers exceptional dv/dt capability and is 100% avalanche tested to ensure reliability under stressful operating conditions. Its characterisation is application-oriented, making it a versatile and robust choice for engineers designing high-efficiency circuits.
With a continuous drain current (Id) of 55A and a low drain-source on-state resistance (Rds(on)) of 0.018Ω (tested at 10V), it ensures minimal power loss and efficient switching performance. The device is housed in the industry-standard TO-220 through-hole package, which provides excellent thermal performance and is easy to mount for prototyping or production.
Key Specifications & Features
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 55A
- Drain-Source On-State Resistance (Rds(on)): 0.018Ω @ 10V
- Gate-Source Threshold Voltage (Max): 1.7V
- Power Dissipation: 95W
- Package / Case Style: TO-220 (Through Hole)
- Number of Pins: 3
- Maximum Operating Temperature: 175°C
- Special Feature: 100% Avalanche Tested
- Special Feature: Exceptional dv/dt Capability
This reliable power MOSFET is an excellent component for building efficient and durable electronic systems, offering a balance of high current handling, low resistance, and proven ruggedness.
- Audio circuit design
- Signal processing applications
- Power management systems
- High-efficiency switching circuits
- Channel Type: N Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 55A
- Drain Source On-State Resistance (Rds(on)): 0.018 ohm @ 10V
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Gate Source Threshold Voltage (Max): 1.7V
- Power Dissipation: 95W
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Product Range: STP
- Special Feature: Exceptional dv/dt Capability
- Special Feature: 100% Avalanche Tested
- Weight: 2.2 grams
- Dimensions (L x W x H): 15 mm x 33 mm x 43 mm
- Drain Source On State Resistance: 0.018ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: Lead (21-Jan-2025)
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