STMicroelectronics N-Channel Power MOSFET, 60V, 50A, TO-220
STMicroelectronics 60V, 50A N-Channel Power MOSFET in TO-220 package. Low Rds(on) of 0.018Ω, ideal for DC-DC converters & industrial use.
The STMicroelectronics STP55NF06 is a high-performance N-channel Power MOSFET, engineered using the unique STripFET process to deliver exceptional efficiency and reliability in demanding applications. This 60V device is specifically designed to minimise input capacitance and gate charge, making it an ideal primary switch for advanced, high-efficiency isolated DC-DC converters commonly used in telecommunications and computer systems.
Its improved gate charge characteristics and lower power dissipation help meet the challenging efficiency requirements of modern electronic designs. The MOSFET is 100% avalanche tested, ensuring robust performance under stressful conditions, and features exceptional dv/dt capability for enhanced switching stability.
Key Features & Applications
- Advanced Process: Manufactured with ST's proprietary STripFET technology for optimal performance.
- Optimised Switching: Low input capacitance and gate charge reduce drive requirements and improve efficiency.
- Proven Reliability: 100% avalanche tested for ruggedness in inductive load scenarios.
- High-Current Handling: Capable of continuous drain currents up to 50A.
- Low On-Resistance: A drain-source on-state resistance (Rds(on)) of just 0.018Ω minimises conduction losses.
- Versatile Mounting: Supplied in a standard TO-220 through-hole package for easy PCB mounting and heatsinking.
This component is intended for any application requiring a low gate charge drive, including industrial power supplies, communications networking equipment, computers, and computer peripherals. Its combination of high current capacity, low resistance, and reliable switching performance makes it a cornerstone component for power management solutions.
- Primary switch in high-efficiency DC-DC converters
- Telecommunications equipment
- Computer systems and servers
- Computer peripherals
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 50A
- Drain-Source On-State Resistance (Rds(on)): 0.018ohm @ 10V
- Gate-Source Threshold Voltage (Max): 3V
- Power Dissipation: 30W
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Dimensions (approx.): 33mm (W) x 43mm (H) x 15mm (D)
- Weight: 2.722 grams
- Drain Source On State Resistance: 0.018ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: Lead (21-Jan-2025)
Always follow local regulations and product guidance.
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