STMicroelectronics N Channel Power MOSFET 60V 30A TO-220
STMicroelectronics N Channel Power MOSFET, 60V, 30A, TO-220. STripFET II technology, 100% avalanche tested, AEC-Q101 qualified for switching.
The STMicroelectronics N Channel Power MOSFET is an advanced STripFET™ II device designed for high-efficiency switching applications. With a drain source voltage of 60V and a continuous drain current of 30A, this transistor delivers reliable and robust performance for demanding circuit designs.
Key Features
- STripFET™ II Technology: Ensures exceptional dv/dt capability and rugged avalanche characteristics
- 100% Avalanche Tested: Guaranteed reliability under stressful conditions
- Low On-Resistance: Features a drain source on-state resistance of just 0.04 ohm, minimising power loss and heat generation
- Low Threshold Drive: Facilitates easier gate drive requirements with a maximum gate source threshold voltage of 2.5V
- AEC-Q101 Qualified: Suitable for automotive and demanding industrial environments
This through-hole mounted MOSFET comes in a TO-220 case style with 3 pins, ensuring straightforward installation on printed circuit boards. It supports a maximum power dissipation of 70W and operates efficiently at temperatures up to 175°C. The compact dimensions of 43mm x 33mm x 15mm and a lightweight design of just 2 grams make it highly suitable for space-constrained electronic assemblies.
- Channel Type: N Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 30A
- Drain Source On State Resistance: 0.04ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 2.5V
- Power Dissipation: 70W
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Qualification: AEC-Q101
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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