STMICROELECTRONICS N-Channel Power MOSFET, 60V 24A, TO-252 (DPAK)
STMICROELECTRONICS 60V, 24A N-channel Power MOSFET in TO-252 package. Low 0.04 ohm Rds(on), for industrial power management.
The STMICROELECTRONICS STD20NF06LT4 is a high-performance N-channel Power MOSFET engineered using STMicroelectronics' advanced STripFET™ II technology and unique Single Feature Size™ strip-based process. This design achieves an extremely high packing density, which directly translates into a very low ON-resistance, ensuring efficient power handling with minimal losses.
The device is built for reliability, featuring rugged avalanche characteristics and a simplified manufacturing process that enhances reproducibility. It boasts an exceptional dV/dt capability and is 100% avalanche tested, providing confidence in demanding applications. Characterisation is application-oriented, supporting an operating junction temperature range from -55°C to 175°C.
Key Features & Applications
- Low ON-Resistance: A drain-source on-state resistance (Rds(on)) of just 0.04 ohms at 10V gate-source voltage ensures high efficiency and reduced heat generation.
- Robust Performance: Designed with exceptional dV/dt capability and 100% avalanche testing for superior ruggedness and reliability in stressful conditions.
- Wide Temperature Range: Operates reliably across a broad junction temperature range from -55°C to 175°C, suitable for industrial environments.
- Surface Mount Design: Housed in a TO-252 (DPAK) package for compact, surface-mount assembly on printed circuit boards (PCBs).
This MOSFET is ideally suited for various power management and industrial applications where efficient switching, robustness, and thermal performance are critical. Its combination of high current handling, low resistance, and proven reliability makes it a trusted component for designers.
- Power management systems
- Industrial control and automation
- DC-DC converters
- Motor drive circuits
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 60 V
- Continuous Drain Current (Id): 24 A
- Drain-Source On-State Resistance (Rds(on)): 0.04 ohm @ 10V
- Transistor Case Style: TO-252 (DPAK)
- Transistor Mounting: Surface Mount
- Gate-Source Threshold Voltage (Max): 2.5 V
- Power Dissipation: 60 W
- No. of Pins: 3
- Operating Junction Temperature Max: 175°C
- Operating Temperature Min: -55°C
- Technology: STripFET™ II, Single Feature Size™ process
- Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Drain Source On State Resistance: 0.04ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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