STMicroelectronics Power MOSFET N Channel 600V 2.4A TO-220FP

The STMicroelectronics Power MOSFET is an N Channel transistor designed for efficient switching and amplification in a variety of electronic circuits. Featuring a drain source voltage (Vds) of 600V and a continuous drain current (Id) of 2.4A, this component offers reliable performance for medium-power applications.

With a drain source on-state resistance of 3.6 ohm, tested at 10V, and a maximum gate source threshold voltage of 3.75V, it ensures precise and efficient operation. The transistor comes in a TO-220FP case style and is designed for through-hole mounting, providing stability and ease of assembly on printed circuit boards.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 600V
• Continuous Drain Current (Id): 2.4A
• Drain Source On State Resistance: 3.6 ohm
• Power Dissipation: 20W
• Maximum Operating Temperature: 150°C
• Number of Pins: 3
• Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)
• Weight: 2 grams

This through-hole MOSFET is suitable for applications requiring robust power handling and efficient thermal management, making it a practical choice for industrial and consumer electronics.