STMicroelectronics N-Channel Power MOSFET, 600V, 11A, TO-220AB

The STMicroelectronics FDmesh™ N-Channel Power MOSFET is a high-performance semiconductor component designed to deliver efficient power switching. By combining reduced on-resistance with fast switching capabilities and an intrinsic fast-recovery body diode, it offers superior performance in demanding applications. This MOSFET is particularly recommended for bridge topologies, including ZVS phase-shift converters, where reliability and speed are critical.

Constructed with rigorous quality controls, this device is 100% avalanche tested to ensure robust operation under high voltage stress. It features excellent high dv/dt and avalanche capabilities, providing enhanced durability in circuits prone to voltage spikes. The low input capacitance and gate charge contribute to faster switching times and reduced drive requirements, improving overall system efficiency.

Key Features & Benefits

• Advanced FDmesh™ Technology: Associates low on-resistance with fast switching and a fast-recovery body diode.
• High Reliability: 100% avalanche tested with high dv/dt capability for robust performance in harsh conditions.
• Efficient Switching: Low gate charge and input capacitance minimise switching losses and drive power.
• Consistent Quality: Manufactured with tight process control for high yields and dependable electrical characteristics.
• Versatile Application: Strongly recommended for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.

Housed in a standard TO-220AB through-hole package, it is easy to mount and suitable for a wide range of power supply and conversion designs. With a high power dissipation rating and a maximum operating temperature of 150°C, this MOSFET is built to handle significant thermal loads, ensuring long-term stability in your electronic projects.