STMICROELECTRONICS N Channel Power MOSFET, 600V, 10A, TO-220
STMICROELECTRONICS N Channel Power MOSFET, 600V, 10A, 0.75 ohm. SuperMESH technology with Zener-protection for industrial & power management.
The STMICROELECTRONICS N Channel Power MOSFET utilises advanced SuperMESH™ technology, offering Zener-protection and minimised gate charge. Developed through the optimisation of STMicroelectronics' well-established strip-based PowerMESH™ layout, this device delivers a significant reduction in ON-resistance.
Designed to ensure an extremely high level of dV/dt capability, this Power MOSFET is perfectly suited for the most demanding industrial and power management applications. Its robust construction and advanced technological design make it a reliable choice for high-efficiency switching and power conversion tasks.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain Source On State Resistance: 0.75 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3.75V
- Power Dissipation: 115W
- Number of Pins: 3
- Operating Temperature Max: 150°C
Physical Characteristics
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2 grams
- For industrial applications
- For power management
- For high dV/dt capability applications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain Source On State Resistance: 0.75 ohm
- Case Style: TO-220
- Mounting Type: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3.75V
- Power Dissipation: 115W
- Number of Pins: 3
- Operating Temperature Max: 150°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2 grams
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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