STMicroelectronics N Channel Power MOSFET 55V 80A TO-220
STMicroelectronics N Channel Power MOSFET, 55V, 80A, TO-220 package. Ideal for power management and industrial switching.
The STMicroelectronics N Channel Power MOSFET is a high-performance component engineered using the unique Single Feature Size strip-based process. This advanced STripFET II design results in an extremely high packing density, which ensures remarkably low on-state resistance, rugged avalanche characteristics, and fewer critical alignment steps during manufacturing. This makes it an exceptional choice for demanding switching applications.
Featuring a robust design, this MOSFET delivers reliable performance with a drain-to-source voltage of 55V and a continuous drain current of 80A. It boasts a power dissipation of 300W and a low on-state resistance of just 6.5mohm at a gate-to-source voltage of 10V. The component operates efficiently across a wide junction temperature range from -55°C to 175°C, ensuring stability in various environments.
Key Specifications
- Channel Type: N Channel
- Drain to Source Voltage (Vds): 55V
- Gate to Source Voltage: ±20V
- Continuous Drain Current (Id): 80A
- Power Dissipation (Pd): 300W
- Drain Source On State Resistance: 8000µohm
- Gate Source Threshold Voltage Max: 3V
- Transistor Case Style: TO-220
- Number of Pins: 3
Ideal for integration into power management systems, consumer electronics, portable devices, and industrial equipment, this through-hole MOSFET provides a dependable solution for efficient power switching. The compact dimensions and lightweight design facilitate easy installation on printed circuit boards.
- For switching applications
- For power management
- For consumer electronics
- For portable devices
- Channel Type: N Channel
- Drain to Source Voltage (Vds): 55V
- Gate to Source Voltage: ±20V
- Continuous Drain Current (Id): 80A
- Power Dissipation (Pd): 300W
- Drain Source On State Resistance: 8000µohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3V
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Height: 43mm
- Width: 33mm
- Depth: 15mm
- Weight: 2.685 grams
- Drain Source Voltage Vds: 55V
- Power Dissipation: 300W
- of Pins: 3Pins
- SVHC: Lead (21-Jan-2025)
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