STMicroelectronics N-Channel Power MOSFET, 550V 45A, TO-247
STMicroelectronics 550V 45A Power MOSFET with 0.1 ohm Rds(on). MDmesh™ technology for high efficiency in industrial applications.
The STMicroelectronics STW45NM50 is a 550V N-channel power MOSFET engineered with the advanced MDmesh™ technology. This innovative design combines the multiple drain process with a PowerMESH™ horizontal layout, resulting in a component that delivers exceptional electrical performance and reliability for demanding industrial applications.
A standout feature is its extremely low on-resistance of just 0.1 ohm, which contributes to minimal power loss and higher overall system efficiency. The MOSFET also offers high dv/dt capability and excellent avalanche characteristics, ensuring robust operation under stressful switching conditions. It is 100% avalanche tested for guaranteed ruggedness.
Utilising a proprietary strip technique, this device boasts superior dynamic performance. It features improved gate charge and lower power dissipation, making it perfectly suited to meet today's challenging efficiency requirements in power supply and motor control designs. Its low input capacitance and gate charge further enhance switching speed and reduce drive requirements.
Key Specifications
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 550V
- Continuous Drain Current (Id): 45A
- Drain-Source On-State Resistance (Rds(on)): 0.1 ohm
- Power Dissipation: 417W
- Transistor Case Style: TO-247
- Mounting Style: Through Hole
- Gate-Source Threshold Voltage (Max): 4V
- Operating Temperature Range: Up to 150°C
With its robust construction and high-performance metrics, this MOSFET is an ideal choice for engineers seeking a reliable and efficient switching solution.
- Industrial power supplies
- Motor control circuits
- Switching power converters
- Inverter designs
- Technology: MDmesh™ with PowerMESH™ layout
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 550V
- Continuous Drain Current (Id): 45A
- Drain-Source On-State Resistance (Rds(on)): 0.1 ohm
- Power Dissipation: 417W
- Transistor Case Style: TO-247
- Transistor Mounting: Through Hole
- Gate-Source Threshold Voltage (Max): 4V
- Operating Temperature Max: 150°C
- Special Feature: 100% Avalanche tested
- Special Feature: High dv/dt capability
- Special Feature: Low input capacitance and gate charge
- Pin Count: 3 Pins
- Weight: 4.43 grams
- Dimensions (H x W x D): 43mm x 33mm x 15mm
- Drain Source On State Resistance: 0.1ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: Lead (21-Jan-2025)
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