STMICROELECTRONICS N Channel Power MOSFET 500V 17A TO-247 Through Hole

The STMICROELECTRONICS N Channel Power MOSFET is designed for high-efficiency switching and power management applications. Featuring a robust N Channel configuration, this transistor delivers reliable performance with a drain source voltage (Vds) of 500V and a continuous drain current (Id) of 17A.

With a low drain source on-state resistance of 0.23 ohm, tested at 10V, it ensures minimal power loss and heat generation during operation. The component boasts a power dissipation of 190W, making it suitable for demanding electrical environments. It also features a maximum gate source threshold voltage of 3.75V.

Encased in a TO-247 package, this through-hole mounting MOSFET is built for straightforward installation on printed circuit boards. It includes 3 pins and can operate at temperatures up to 150°C, ensuring stability under thermal stress. The device measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 6 grams.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 17A
• Drain Source On State Resistance: 0.23 ohm
• Transistor Case Style: TO-247
• Transistor Mounting: Through Hole
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3.75V
• Power Dissipation: 190W
• Number of Pins: 3
• Operating Temperature Max: 150°C

This MOSFET is a reliable choice for engineers and hobbyists requiring a durable and efficient switching component for their electronic projects.