STMicroelectronics N Channel Power MOSFET 30V 6.5A 0.05 Ohm SOT-223

This STMicroelectronics N Channel Power MOSFET utilises the innovative STripFET™ II technology, developed through a unique Single Feature Size™ strip-based process. This advanced manufacturing method results in extremely high packing density, which significantly contributes to the device's low ON-resistance. With rugged avalanche characteristics and less critical alignment steps during production, this MOSFET ensures remarkable manufacturing reproducibility and consistent performance.

Designed for efficiency, the component features a low threshold drive, requiring a maximum gate source threshold voltage of just 1V. It operates reliably across a wide junction temperature range from -55°C to 150°C, making it suitable for demanding environments. The surface mount SOT-223 package features 4 pins and offers a power dissipation of 3.3W, ensuring robust operation in various circuit designs.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 6.5A
• Drain Source On State Resistance: 0.05 ohm
• Rds(on) Test Voltage: 10V
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Power Dissipation: 3.3W
• No. of Pins: 4
• Operating Temperature Range: -55°C to 150°C

With its compact dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, and a lightweight design of just 0.156 grams, this MOSFET is perfectly suited for space-constrained applications requiring reliable power management and industrial switching capabilities.