STMicroelectronics N-Channel Power MOSFET, 100V 26A, TO-220
High-power N-Channel MOSFET, 100V, 26A, 0.055Ω Rds(on) in a TO-220 package. Ideal for motor control, SMPS & DC-DC conversion.
The STMicroelectronics N-Channel Power MOSFET is a high-performance semiconductor component designed for demanding switching applications. With a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) of 26A, it delivers robust power handling in a compact TO-220 package. Its exceptionally low on-state resistance (Rds(on)) of just 0.055Ω minimises power loss and heat generation, enhancing overall system efficiency.
This through-hole mount device is engineered for reliability, featuring a maximum power dissipation of 85W and an operating temperature range extending up to 175°C. The gate-source threshold voltage is a maximum of 3V, making it compatible with standard logic-level drive circuits. Its robust three-pin TO-220 case style provides excellent thermal performance, allowing for effective heat sinking when required.
Key Applications
This MOSFET is ideal for a wide range of power management and conversion tasks. Its specifications make it suitable for use in switch-mode power supplies (SMPS), motor control circuits, DC-DC converters, and high-current switching applications in industrial equipment, automotive systems, and consumer electronics.
Specifications
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 26A
- Drain-Source On-State Resistance (Rds(on)): 0.055Ω @ 10V
- Gate-Source Threshold Voltage (Max): 3V
- Maximum Power Dissipation: 85W
- Package / Case: TO-220
- Mounting Type: Through Hole
- Number of Pins: 3
- Maximum Operating Temperature: +175°C
- Package Dimensions: 15mm (Depth) x 33mm (Width) x 43mm (Height)
- Switch-mode power supplies (SMPS)
- Motor control and driver circuits
- DC-DC converter modules
- High-current switching applications
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 100 V
- Continuous Drain Current (Id): 26 A
- Drain-Source On-State Resistance (Rds(on)): 0.055 ohm @ 10V
- Gate-Source Threshold Voltage (Max): 3 V
- Maximum Power Dissipation: 85 W
- Package / Case Style: TO-220
- Mounting Type: Through Hole
- Number of Pins: 3
- Maximum Operating Temperature: 175 °C
- Dimensions (LxWxH): 15 mm x 33 mm x 43 mm
- Weight: 2 grams
- Drain Source On State Resistance: 0.055ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Power Dissipation: 85W
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- SVHC: Lead (21-Jan-2025)
Documents
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