STMicroelectronics N Channel Power MOSFET 1.5kV 4A 5 ohm TO-220
STMicroelectronics 1.5kV 4A N Channel Power MOSFET in TO-220 package. High-speed switching, 100% avalanche tested. Ideal for switching apps.
The STMicroelectronics N Channel Power MOSFET is a 1500V, 4A device utilising the advanced PowerMESH™ technology, housed in a standard 3-pin TO-220 package. Designed using the well-consolidated high voltage MESH OVERLAY™ process, this component delivers high-speed switching performance. Its intrinsic capacitances and gate charge (Qg) have been carefully minimised to enhance efficiency.
Featuring a strengthened layout with edge termination, this power MOSFET has been 100% avalanche tested to ensure robust performance and reliability. It is specifically suitable for switching applications, providing consistent operation under demanding electrical conditions. The device offers an optimised RDS(on) per area alongside excellent switching characteristics, making it a practical choice for circuit designers.
Key Specifications:
- Channel Type: N Channel
- Drain Source Voltage (Vds): 1.5kV
- Continuous Drain Current (Id): 4A
- Drain Source On State Resistance: 7 ohm
- Rds(on) Test Voltage: 30V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 160W
- Operating Temperature Max: 150°C
Designed for through-hole mounting, the transistor measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 4.763 grams, facilitating straightforward integration into various circuit board layouts.
- Channel Type: N Channel
- Drain Source Voltage Vds: 1.5kV
- Continuous Drain Current Id: 4A
- Drain Source On State Resistance: 7 ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 30V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 160W
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 4.763 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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