STMicroelectronics N-Channel Power MOSFET 1.5 kV 2.5 A 9 ohm H2PAK-2 SMD
STMicroelectronics N-channel power MOSFET rated 1.5 kV, 2.5 A and 9 ohm in a compact H2PAK-2 surface-mount package for power conversion circuits.
STMicroelectronics N-Channel Power MOSFET is a 1.5 kV, 2.5 A high-voltage device with 9 ohm on-state resistance, designed for demanding switching applications.
Overview
The STMicroelectronics PowerMESH N-Channel Power MOSFET is a high-voltage semiconductor device for demanding switching applications. It is built using the company's strip layout-based MESHOVERLAY process, which features optimised intrinsic capacitances and minimised gate charge (Qg). These characteristics support high-speed switching and efficient operation with reduced switching losses, making the device suitable for power conversion circuits.
Key Features
- Drain-source voltage (Vds) rating of 1.5 kV
- Continuous drain current (Id) of 2.5 A
- On-state resistance (Rds(on)) of 9 ohms at a 10 V gate drive, contributing to lower conduction losses
- 100% avalanche tested for stressful operating conditions, including inductive load switching
- Maximum power dissipation of 140 W
- Maximum operating temperature of 150°C
Package
The device is housed in a compact, three-pin H2PAK-2 surface-mount package designed for modern, space-constrained PCB layouts. Dimensions are 33 mm (width) x 43 mm (height) x 15 mm (depth), and the product weighs 1.623 grams.
Applications
Suitable for power conversion circuits, demanding switching applications, inductive load switching, and industrial and commercial settings operating up to 150°C.
- For demanding switching applications
- For power conversion circuits
- For inductive load switching
- For modern, space-constrained PCB layouts
- Technology: PowerMESH with MESHOVERLAY process
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 1.5 kV
- Continuous Drain Current (Id): 2.5 A
- Drain-Source On-State Resistance (Rds(on)): 9 ohm (tested at 10 V)
- Package: H2PAK-2 (Surface Mount)
- Number of Pins: 3
- Gate-Source Threshold Voltage (Max): 4 V
- Maximum Power Dissipation: 140 W
- Maximum Operating Temperature: 150°C
- Width: 33 mm
- Height: 43 mm
- Depth: 15 mm
- Weight: 1.623 grams
- Special Feature: 100% avalanche tested
- Special Feature: Optimised intrinsic capacitances and minimised gate charge (Qg)
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