St MicroElectronics BUTW92 NPN Bipolar Transistor 250V 180W 60A

The St MicroElectronics BUTW92 is an NPN bipolar junction transistor rated at 250V and 60A, with a maximum power dissipation of 180W. It is designed for power electronics applications that require efficient power conversion and controlled switching.

Overview

The BUTW92 offers fast switching times and a very low saturation voltage. According to the product information, these characteristics help to minimise both switching and conduction losses, which can result in cooler operation and improved overall system efficiency. The transistor has a specified minimum DC current gain (hFE) of 9, which supports consistent gain performance in circuits where stable gain is required. It is housed in a TO-247 through-hole package.

Key Features

• Transistor type: NPN bipolar junction transistor (BJT)
• Maximum collector-emitter voltage (Vce): 250V
• Continuous collector current (Ic): 60A
• Maximum power dissipation: 180W
• Minimum DC current gain (hFE): 9
• Package / case style: TO-247
• Mounting type: Through-hole, 3 pins
• Maximum operating temperature: 150°C
• Dimensions (width x depth x height): 3.3 x 1.5 x 4.3
• Weight: 6.264 gm

Applications

• Motor drive control in industrial, automotive and consumer applications
• Switch-mode power supplies (SMPS), DC-DC converters and power regulation circuits
• High-efficiency converters where minimising energy loss is a priority

The BUTW92 is suited to engineers and hobbyists designing high-voltage, high-current circuits that require a through-hole power device in a TO-247 package.