ST Microelectronics MOSFET Transistor N Channel 53A 500V
500V N-channel MOSFET from STMicroelectronics, 53A, 0.08 ohm, high ruggedness. Ideal for power supplies and motor drives.
The STMicroelectronics STE53NC50 is a high-performance N-channel PowerMesh™II MOSFET, designed for demanding power conversion applications. With a 500V drain-source voltage and 53A continuous drain current, this transistor delivers robust performance in high-power systems. Its advanced layout improves the area figure of merit while maintaining excellent switching speed, minimized gate charge, and high ruggedness.
This MOSFET offers a very low on-state resistance of 0.08 ohm (at Vgs=10V), ensuring high efficiency and reduced power losses. The device is capable of high peak power dissipation of up to 460W and operates reliably at temperatures up to 150°C. Each unit is 100% Avalanche tested to guarantee reliability under stressful conditions.
Key features
- N-channel PowerMesh™II technology
- Extremely high dv/dt capability
- Minimized gate charge for faster switching
- High peak power and ruggedness
- 100% Avalanche tested
Applications
This MOSFET is ideal for use in DC-AC converters, welding equipment, uninterruptible power supplies, power management systems, and motor drive control. Its robust construction and high-voltage rating make it a dependable choice for industrial and commercial power electronics.
Specifications
- Channel Type: N Channel
- Continuous Drain Current (Id): 53A
- Drain-Source Voltage (Vds): 500V
- Drain-Source On-State Resistance (Rds(on)): 0.08 ohm
- Rds(on) Test Voltage: 10V
- Gate-Source Threshold Voltage (Max): 3V
- Power Dissipation: 460W
- Operating Temperature (Max): 150°C
- Dimensions: 43mm (H) x 33mm (W) x 15mm (D)
- Weight: 46.584g
- DC-AC converters
- Welding equipment
- Uninterruptible power supplies
- Power management systems
- Channel Type: N Channel
- Continuous Drain Current: 53A
- Drain Source Voltage: 500V
- Drain Source On State Resistance: 0.08 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3V
- Power Dissipation: 460W
- Operating Temperature Max: 150°C
- 100% Avalanche tested
- Gate charge minimized
- High peak power
- High ruggedness capability
- Height: 43mm
- Width: 33mm
- Depth: 15mm
- Weight: 46.584g
- High ruggedness capability Channel Type: N Channel
- Continuous Drain Current Id: 53A
- Drain Source Voltage Vds: 500V
- SVHC: Lead (21-Jan-2025)
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