SMD N-Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT-23
SMD N-Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT-23. Ideal for high-efficiency power management and motor control applications.
The SMD N-Channel Power MOSFET is an enhancement mode vertical MOSFET designed to minimise on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it highly suitable for high-efficiency power management and motor control applications.
Key Features
- Low on-resistance and low gate threshold voltage
- Low input capacitance and fast switching speed
- Small surface-mount SOT-23 package
Electrical Characteristics (at TA = +25°C)
- Drain-Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 0.15A (150mA)
- Pulsed Drain Current: 3A
- Gate-Source Voltage: ±20V
- Power Dissipation: 330mW
- Static Drain-Source On-State Resistance (RDS(ON)): 5 ohm max (at VGS = 10V, ID = 200mA)
- Gate Source Threshold Voltage Max: 3V
Physical Specifications
- Package Type: SOT-23
- Mounting: Surface Mount
- Pins: 3
- Operating Temperature Range: -55°C to +150°C
- Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)
- Weight: 0.033 grams
This component provides reliable and efficient switching for low-power electronic circuits, ensuring optimal performance in compact designs. It is manufactured to meet strict industry standards for power management components.
- Channel Type: N-Channel
- Drain Source Voltage Vds: 60V
- Continuous Drain Current Id: 150mA
- Drain Source On State Resistance: 5 ohm
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3V
- Power Dissipation: 330mW
- No. of Pins: 3
- Operating Temperature Min: -55°C
- Operating Temperature Max: 150°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.033 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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