Diodes P-Channel Power MOSFET 60V 3A SOT-23 Surface Mount

Diodes P-Channel Power MOSFET 60V 3A SOT-23 is a surface-mount P-channel enhancement-mode transistor engineered for high-efficiency power management applications. With a 60V drain source voltage and 3A continuous drain current rating, it is designed for compact, high-performance electronic circuits.

Overview

This device minimises ON-state resistance while delivering fast switching performance. It has a moulded plastic case and six pins in a SOT-23 package. The copper lead-frame terminals are finished with a solderable matte tin coating, supporting reliable solder joints. The device is halogen-free and qualified to AEC-Q101 standards, and its UL94V-0 flame-rated case supports use in demanding environments.

Key Features

• Low ON-resistance for reduced power losses
• Fast switching speed for efficient high-frequency operation
• Low gate drive and low threshold voltage simplify drive circuitry
• Low input capacitance reduces switching losses
• Halogen-free, green device for environmental compliance
• Qualified to AEC-Q101 standards for automotive and industrial reliability
• Moisture sensitivity level 1 per J-STD-020 for reflow soldering

Specifications

• Channel Type: P-Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 3A
• Drain Source On-State Resistance: 0.125Ω (Typical)
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3V
• Power Dissipation: 1.1W
• Operating Temperature Max: 150°C
• Transistor Case Style: SOT-23
• Mounting: Surface Mount
• No. of Pins: 6 Pins
• Width: 3.3 mm, Depth: 1.5 mm, Height: 4.3 mm
• Weight: 0.018 gm

Applications

The device is suitable for power management, motor drive control, and high-reliability sectors such as aerospace, defence, military, and automotive systems. Its low ON-resistance and fast switching capabilities make it suitable for power switching and load control in space-constrained designs.