Power MOSFET P-Channel 40V 6.4A SOT-223 Surface Mount
DIODES INC. P-Channel MOSFET, 40V, 6.4A, low on-resistance, SOT-223 surface mount for efficient power management.
The DIODES INC. ZXMP4A16GTA is a P-channel enhancement mode MOSFET designed to deliver efficient power management in compact surface-mount applications. With a drain-source voltage of -40V and a continuous drain current of -6.4A at 25°C, this transistor offers a robust solution for a wide range of electronic circuits.
Featuring an ultra-low on-state resistance (RDS(on)) of just 60mΩ at VGS = -10V, the device minimizes conduction losses and improves overall system efficiency. Its fast switching speed and low input capacitance make it ideal for high-frequency power conversion and switching applications, ensuring reliable performance in demanding environments.
The MOSFET is housed in a space-saving SOT-223 (type DN) package, which is designed for surface mounting on printed circuit boards, allowing for compact and efficient PCB layouts. With a gate-source voltage range of ±20V and a power dissipation of 3.9W, it can handle robust power requirements while maintaining thermal stability across a wide operating temperature range from -55°C to +150°C.
Typical applications include DC-DC converters, power management functions, and backlighting, where efficiency and compactness are critical. The ZXMP4A16GTA provides designers with a reliable and high-performance component for their next-generation electronic designs.
- Channel Type: P Channel
- Drain Source Voltage (Vds): -40V at TA=+25°C
- Continuous Drain Current (Id): -6.4A at TA=+25°C, VGS=-10V, steady state
- Pulsed Drain Current: -21A at TA=+25°C
- Drain Source On-State Resistance (RDS(on)): 60mΩ max at VGS=-10V, ID=-3.8A, TA=+25°C
- Gate-Source Voltage: ±20V at TA=+25°C
- Gate Threshold Voltage: -1.0V min at VDS=VGS, ID=-250µA, TA=+25°C
- Power Dissipation: 3.9W
- Transistor Case Style: SOT-223
- Transistor Mounting: Surface Mount
- No. of Pins: 4 Pins
- Operating and Storage Temperature Range: -55°C to +150°C
- Low Input Capacitance
- Low On-Resistance
- Fast Switching Speed
- Drain Source On State Resistance: 0.06ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1V
- of Pins: 4Pins
- Operating Temperature Max: 150°C
- SVHC: Lead (25-Jun-2025)
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