Power MOSFET P Channel 20V 3A 0.12 Ohm SOT-23 SMD

This P-channel enhancement mode MOSFET is engineered to minimise on-state resistance (RDS(ON)) whilst maintaining superior switching performance. It is an ideal choice for high-efficiency power management applications, providing reliable operation where power conservation and fast switching are critical.

Featuring low on-resistance and low input capacitance, this component ensures rapid switching speeds, enhancing the overall efficiency of your circuit designs. It comes in a standard SOT-23 surface mount package, making it highly suitable for compact and densely populated printed circuit board assemblies.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 3A
• Drain Source On State Resistance: 0.12 Ohm
• Power Dissipation: 1.5W
• Gate Source Threshold Voltage Max: 1.2V
• Number of Pins: 3
• Mounting: Surface Mount
• Case Style: SOT-23
• Operating Temperature Range: -55°C to +150°C

With robust electrical characteristics, including a pulsed drain current of -10A and a gate-source voltage of ±8V at +25°C, this MOSFET offers versatile performance. The product dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 4.536 grams, facilitating easy integration into automated pick-and-place manufacturing processes.