Power MOSFET N Channel 60V 1.6A SOT-23 SMD

The DIODES INC. DMN6140L-13 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. Its advanced construction minimises on-state resistance (RDS(ON)) while delivering superior switching performance, making it ideal for modern electronic applications.

This MOSFET offers a drain-source voltage of 60V and a continuous drain current of 1.6A (at VGS = 10V), with a low on-resistance of just 0.092 Ohm to reduce power losses. It features fast switching speed and low input capacitance, enhancing performance in high-frequency circuits. The device is housed in a compact SOT-23 surface-mount package, suitable for automated assembly.

Key Features

• Low on-resistance and low input capacitance for efficient operation
• Fast switching speed with low input/output leakage
• Drain-source voltage: 60V at TA = +25°C
• Gate-source voltage: ±20V at TA = +25°C
• Continuous drain current: 1.6A at TA = +25°C, VGS = 10V
• Pulsed drain current: 10A (10µs pulse, duty cycle = 1%)
• Total power dissipation: 0.7W at TA = +25°C
• Maximum continuous body diode forward current: 1.5A
• Operating and storage temperature range: –55°C to +150°C

Applications

• DC-DC converters
• Power management functions
• Analogue switches

With its robust thermal performance and compact design, the DMN6140L-13 is a reliable choice for space-constrained power circuits.