Power MOSFET N Channel 30V 5A SOT-223 Surface Mount

The ONSEMI FDT457N is a high-performance N-channel enhancement mode Power MOSFET, engineered with high cell density DMOS technology to deliver exceptionally low on-state resistance (RDS(ON)) and superior switching performance. This makes it an ideal choice for low voltage, low current applications, including notebook power management, battery-powered circuits, and DC motor control.

This surface mount transistor is housed in a compact SOT-223 package and features a 30V drain-source voltage with a 5A continuous drain current, making it suitable for a wide range of general purpose switching and amplification tasks. The device offers a continuous gate-source voltage rating of ±20V and a low thermal resistance of 42°C/W (junction-to-ambient) and 12°C/W (junction-to-case) for improved thermal management.

Key Benefits:

• Extremely low RDS(ON) for reduced power losses
• High power and current handling capability
• Robust design for reliable operation in demanding environments
• Surface mount package for easy integration

With its high cell density design and proven DMOS technology, this MOSFET ensures efficient power conversion and long-term reliability, making it a versatile component for engineers and hobbyists alike.