Power MOSFET N Channel 20V 630mA SOT-523 SMD

This N-channel enhancement mode power MOSFET offers a reliable and efficient solution for your electronic circuit requirements. Designed with low on-resistance and a low gate threshold voltage, it ensures efficient power management with minimal energy loss. The device features low input capacitance, which facilitates fast switching speeds, making it highly suitable for dynamic and high-frequency applications. Furthermore, it boasts low input and output leakage, enhancing overall circuit stability and performance.

For enhanced durability, the component is ESD protected up to 2kV, safeguarding against electrostatic discharge during handling and operation. It operates with a drain-source voltage of 20V and a continuous drain current of 630mA, with a pulsed drain current capability of 3A. The total power dissipation is rated at 280mW.

Housed in a compact SOT-523 surface mount package with 3 pins, this MOSFET is ideal for space-constrained printed circuit board designs. It supports a wide operating and storage temperature range from -55°C to +150°C, ensuring consistent performance in demanding environmental conditions.