Power MOSFET N Channel 20V 4.9A SOT-23 Surface Mount

The TSM2314CX is an advanced N-channel Power MOSFET designed for high-performance switching applications. Utilising a sophisticated Trench process technology, this component achieves an ultra-low on-resistance of just 0.027 ohms, ensuring minimal power loss and improved efficiency in your circuits.

Featuring a high-density cell design, this MOSFET excels in applications requiring low on-resistance and high current handling. With a continuous drain current of 4.9A and a drain-source voltage rating of 20V, it is well-suited for a variety of power management tasks. The device comes in a compact SOT-23 package, making it ideal for space-constrained designs.

This MOSFET supports a ±12V gate-source voltage and offers a maximum power dissipation of 1.25W. Its surface-mount design simplifies PCB assembly and ensures reliable performance in automated manufacturing processes. The operating temperature range extends up to 150°C, providing excellent thermal stability in demanding environments.

Key Features:

• Advanced Trench Process Technology: Ensures superior electrical performance and reduced on-resistance.
• Ultra-Low On-Resistance (0.027Ω): Minimises conduction losses for high-efficiency operation.
• High-Density Cell Design: Optimises current handling capability.
• SOT-23 Package: Compact and industry-standard, easy to integrate.
• Wide Operating Temperature Range: From -55°C to 150°C for robust performance.
• Suitable for Audio and Signal Processing: Delivers clean and reliable switching.

This MOSFET is supplied in tape and reel packaging, with a weight of 0.653 grams, making it suitable for high-volume manufacturing. Whether for portable devices, power supplies, or signal processing circuits, the TSM2314CX offers a reliable and efficient solution.