PNP Darlington BJT Transistor, 120V, 2A, 2W, SOT-223 SMD

The PNP Darlington Bipolar Transistor from Diodes Inc. is a silicon planar medium power device designed for robust performance in demanding electronic circuits. Featuring a maximum collector-emitter voltage of 120V and a power dissipation of 2W, this transistor is perfectly suited for a variety of medium power applications. The Darlington configuration provides a very high DC current gain of 3000 hFE, specified up to a collector current of 2A, ensuring efficient switching and amplification.

Designed for surface mount technology, this component comes in the compact SOT-223 case style with 3 pins, allowing for efficient use of PCB space. It operates reliably at transition frequencies up to 160MHz and can withstand maximum operating temperatures of up to 150°C, making it suitable for industrial environments where thermal performance is critical. The product has a weight of 0.559 grams and overall dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth.

Key Specifications

• Transistor Polarity: PNP
• Collector Emitter Voltage (V(br)ceo): 120V
• Power Dissipation (Pd): 2W
• DC Collector Current: 2A
• DC Current Gain (hFE): 3000
• Transition Frequency: 160MHz
• Mounting Type: Surface Mount
• Case Style: SOT-223
• Number of Pins: 3
• Operating Temperature Max: 150°C

Whether you are designing industrial control systems or power management circuits, this PNP Darlington transistor offers a reliable and efficient surface mount solution.