P Channel Power MOSFET 60V 250mA TO-92 Microchip

The Microchip P Channel Power MOSFET is a through-hole transistor housed in a compact TO-92 package, designed for low-power switching and amplification applications. With a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 250mA, this MOSFET provides reliable performance in a variety of electronic circuits.

The device features a low drain-source on-state resistance of 9 ohms (tested at a gate-source voltage of 10V), ensuring efficient operation with minimal power loss. The gate-source threshold voltage is rated at a maximum of 3.5V, making it suitable for logic-level drive in many applications.

Engineered for through-hole mounting, the TO-92 package is easy to integrate into printed circuit boards, offering a robust and stable connection. The MOSFET supports a maximum power dissipation of 1W and can operate at temperatures up to 150°C, making it suitable for demanding environments.

This component features 3 pins and is designed for applications requiring P-channel switching, such as load switching, power management, and signal processing. The compact dimensions (43mm x 33mm x 15mm) and lightweight design (0.2g) allow for space-efficient integration in various electronic assemblies.

Key specifications include a maximum operating temperature of 150°C, ensuring thermal stability in high-temperature environments. The product does not require any special compliance considerations, as it is free from substances of very high concern (SVHC). It is a reliable choice for engineers and hobbyists seeking a dependable P-channel MOSFET for their designs.