ONSEMI Schottky Rectifier, 60V, 1A, Single, DO-41, 750mV

The ONSEMI Schottky Rectifier is an axial-lead device housed in an epoxy moulded case, designed for reliable performance in demanding environments. It employs the Schottky barrier principle within a large area metal-to-silicon power diode, ensuring high efficiency and low power loss. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact, delivering a highly stable oxide-passivated junction.

This rectifier offers several key advantages, including low reverse current, low stored charge, and majority carrier conduction. All external surfaces are corrosion-resistant, enhancing durability and longevity. With a maximum forward voltage of 750 mV and the ability to handle a forward surge current of 25 A, it is built for robust operation up to 150°C.

Key Features

• Epoxy moulded case with axial leads
• Epitaxial construction with oxide passivation
• Low power loss and high efficiency
• Corrosion-resistant external surfaces
• Through-hole mounting for secure installation

Ideal for low-voltage, high-frequency applications, this rectifier is perfectly suited for use in inverters, as free-wheeling diodes, and for polarity protection. It measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 0.4 grams.