ONSEMI Power MOSFET, P-Channel, 60V, 3A, 0.105 ohm, SuperSOT
ONSEMI -60V P-channel PowerTrench® MOSFET with low 0.105 ohm RDS(on) for efficient switching in power supplies and converters.
The ONSEMI Power MOSFET (FDC5614P series) is a -60V P-channel logic level PowerTrench® MOSFET, engineered for exceptional efficiency and switching speed. It has been specially designed to minimise on-state resistance while maintaining a low gate charge, delivering superior switching performance for power management applications.
Utilising the latest medium voltage technology, this MOSFET is optimised as a power switch, combining small gate charge (QG) with a small reverse recovery charge (Qrr) and a soft reverse recovery body diode. This combination significantly contributes to fast switching, making it highly effective for synchronous rectification in AC/DC power supplies and other demanding circuits.
A key innovation is the shielded-gate structure, which provides superior charge balance. By leveraging this advanced PowerTrench® technology, the device achieves a figure of merit (FOM, QG x RDS(ON)) that is 66% lower than previous generations. This translates directly into higher efficiency and reduced power losses. Furthermore, the soft body diode performance can eliminate the need for snubber circuits or minimise undesirable voltage spikes, simplifying design and improving reliability.
This general-usage component is highly versatile and suitable for a broad spectrum of applications where efficient power switching is critical. Its high-performance trench technology ensures an extremely low RDS(ON), maximising current flow and minimising heat generation during operation.
- Synchronous rectification in AC/DC power supplies
- General power switching applications
- Power management circuits
- DC-DC converters
- Channel Type: P Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 3A
- Drain Source On-State Resistance (RDS(on)): 0.105 ohm
- Test Voltage for RDS(on): 10V
- Gate Source Threshold Voltage (Max): 1.6V
- Power Dissipation: 1.6W
- Transistor Case Style: SuperSOT
- Transistor Mounting: Surface Mount
- Number of Pins: 6
- Operating Temperature (Max): 150°C
- Technology: PowerTrench® with shielded-gate structure
- Body Diode: Soft reverse recovery
- Special Feature: Low gate charge (QG)
- Special Feature: Small reverse recovery charge (Qrr)
- Drain Source On State Resistance: 0.105ohm
- Rds(on) Test Voltage: 10V
- of Pins: 6Pins
- SVHC: No SVHC (25-Jun-2025)
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