Onsemi HUF75344G3 Power MOSFET N-Channel 55V 75A TO-247

The Onsemi HUF75344G3 Power MOSFET is an N-channel device rated at 75A continuous drain current, designed for power management and switching applications. Built on UltraFET process technology, it is engineered for low on-resistance per silicon area and high power efficiency, which supports reduced power loss in designs where thermal management and efficiency are important.

Overview

This component is suited to power conversion and management tasks. Its low RDS(on) contributes to higher system efficiency in switching regulators and DC-DC converters. The device can also be used in relay drivers, low-voltage bus switches, and power management subsystems within portable and battery-operated products, where it may help extend battery life.

Key Features

• Continuous Drain Current: 75A
• On-Resistance: RDS(on) of 8000 µΩ for reduced conduction losses
• Avalanche Rated: Engineered to withstand high energy in avalanche mode for improved reliability in inductive load scenarios
• Fast Body Diode: Integrated diode with very low reverse recovery time and stored charge, which supports fast-switching circuits and helps reduce voltage spikes
• Operating Temperature: Operates at temperatures up to 175°C

Package and Mounting

The device is housed in a TO-247 package for through-hole mounting. It is rated for a power dissipation of 285W.

Dimensions and Weight

Width 3.3, depth 1.5, and height 4.3. Weight 7.076 gm.

Choose the Onsemi HUF75344G3 Power MOSFET for power conversion designs that require a 55V, 75A N-channel device in a TO-247 through-hole package.