ONSEMI Silicon PNP Power Transistor, 4A, 80V

This ONSEMI Silicon PNP Power Transistor is designed for use in power amplifier and switching circuits, offering reliable safe area limits for robust performance. Engineered for industrial and power management applications, this transistor serves as a complement to standard NPN transistors, providing versatile circuit design options.

Built with a through-hole mounting style and featuring 3 pins, it ensures straightforward installation on printed circuit boards. The transistor boasts a maximum collector emitter voltage of 80V and a continuous collector current of 4A, making it suitable for medium-power applications. With a power dissipation of 40W and a minimum DC current gain (hFE) of 80, it delivers consistent and efficient operation.

Key Specifications

• Polarity: PNP
• Collector Emitter Voltage Max: 80V
• Continuous Collector Current: 4A
• Power Dissipation: 40W
• Transition Frequency: 2MHz
• DC Current Gain hFE Min: 80hFE
• Operating Temperature Max: 150°C

The component features a compact design, with dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, and weighs just 0.64 grams. It is an ideal choice for designers requiring a dependable PNP transistor for power management and switching solutions.