ONSEMI PNP High Power Transistor TO-3 120V 15A
ONSEMI silicon PNP high power transistor (TO-3, 120V, 15A). Ideal for audio, power switching, and industrial linear applications.
The ONSEMI Silicon PNP High Power Transistor is a high-performance bipolar complementary device designed for demanding linear applications. Engineered specifically for high power audio systems, disk head positioners, and other linear circuits, this transistor delivers reliable and robust performance. It is also highly suitable for power switching circuits, including relay or solenoid drivers, DC-to-DC converters, inverters, and inductive loads that require a higher safe operating area.
Key Features
- High current gain bandwidth
- Safe operating area
- Collector-base voltage (Vcbo) of 200V
- Emitter-base voltage of 7V
- PNP polarity
- Maximum collector emitter voltage of 120V
- Continuous collector current of 15A
- Power dissipation of 180W
With a robust TO-3 case style and through-hole mounting, installation is straightforward. The device features 2 pins and offers a minimum DC current gain (hFE) of 70, alongside a transition frequency of 18MHz. It operates reliably in temperatures up to 200°C, making it an excellent choice for industrial and power management applications. The physical dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 11.5 grams.
- High power audio systems
- Disk head positioners
- Linear applications
- Power switching circuits
- Transistor Polarity: PNP
- Collector Emitter Voltage Max: 120V
- Continuous Collector Current: 15A
- Power Dissipation: 180W
- Collector-base voltage (Vcbo): 200V
- Emitter-base voltage: 7V
- Transistor Case Style: TO-3
- Transistor Mounting: Through Hole
- No. of Pins: 2
- Transition Frequency: 18MHz
- DC Current Gain hFE Min: 70hFE
- Operating Temperature Max: 200°C
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 11.5 grams
- of Pins: 2Pins
- SVHC: Lead (25-Jun-2025)
Documents
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