ONSEMI PNP Bipolar BJT Transistor, 60V 3A 40W, TO-220

The ONSEMI PNP Bipolar BJT Transistor is a robust single transistor designed for a variety of general-purpose switching and amplification applications. With a maximum collector-emitter voltage of 60V and a continuous collector current of 3A, this component delivers reliable performance for medium-power electronic circuits. It offers a power dissipation of 40W, making it suitable for designs that require efficient heat management.

Housed in the industry-standard TO-220 case style, this through-hole mounted transistor ensures easy installation and secure board attachment. The device features a minimum DC current gain (hFE) of 10 and a transition frequency of 3MHz, providing consistent signal processing capabilities. It operates reliably at temperatures up to 150°C, ensuring stability in demanding environments. The component measures 43 mm in height, 33 mm in width, and 15 mm in depth.

Key Specifications

• Transistor Polarity: PNP
• Max Collector Emitter Voltage: 60V
• Continuous Collector Current: 3A
• Power Dissipation: 40W
• Transition Frequency: 3MHz
• DC Current Gain (hFE Min): 10
• Operating Temperature Max: 150°C
• Case Style: TO-220
• Mounting Type: Through Hole
• Number of Pins: 3

Whether you are working on power regulation or general switching circuits, the ONSEMI PNP BJT Transistor provides a durable and efficient solution.