ONSEMI P Channel Power MOSFET 30V 5.3A 0.05ohm SOIC

This ONSEMI P-channel PowerTrench® MOSFET is specifically tailored to minimise on-state resistance and maintain low gate charge for reliable switching performance. As a medium voltage power MOSFET, it is optimised for power switching, combining small gate charge (QG) and small reverse recovery charge (Qrr) with a soft reverse recovery body diode. These features contribute to fast switching, making it highly suitable for synchronous rectification in AC/DC power supplies.

The device employs a shielded-gate structure that provides charge balance, resulting in a figure of merit (QG x RDS(ON)) that is significantly lower than previous generations. The soft body diode performance of this PowerTrench® MOSFET can eliminate the need for a snubber circuit or replace higher voltage rated MOSFETs, as it effectively minimises undesirable voltage spikes during synchronous rectification.

Utilising high-performance trench technology, this component ensures low RDS(on) alongside high power and current handling capability. It is a versatile component suitable for a wide range of general-purpose applications requiring efficient power management.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 30 V
• Continuous Drain Current (Id): 5.3 A
• Drain Source On State Resistance: 0.05 ohm
• Case Style: SOIC
• Mounting: Surface Mount
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: 175°C