ONSEMI NTR4101PT1G P-Channel Power MOSFET, -20V, 3.2A, SOT-23
ONSEMI -20V P-Channel Power MOSFET with low Rds(on) for power management in computers, portables & industrial devices. SOT-23 package.
The ONSEMI NTR4101PT1G is a P-channel Trench Power MOSFET designed for efficient power management in compact electronic designs. It offers a drain-source voltage of -20V and a continuous drain current of -2.4A, making it a robust solution for a variety of modern applications where space and performance are critical.
Engineered with leading -20V Trench technology, this MOSFET provides exceptionally low on-state resistance (RDS(ON)), which minimises power loss and improves overall system efficiency. It is rated for a low gate drive voltage of -1.8V, allowing for compatibility with common low-voltage logic circuits and simplifying design integration.
Housed in a surface-mount SOT-23 package, this component is ideal for achieving a small PCB footprint in densely populated boards. It is constructed with halogen-free materials, adhering to modern environmental standards. The device operates reliably across a broad temperature range from -55°C to 150°C, ensuring stable performance in demanding conditions.
Key Applications
- Power Management: For efficient switching and regulation in power supply circuits.
- Computing & Peripherals: Suitable for load switching in motherboards, notebooks, and external devices.
- Portable Devices: Ideal for battery protection circuits and power management in smartphones, tablets, and wearables.
- Charging Circuits: Used to manage power flow in battery charging systems.
- Industrial Electronics: Provides reliable switching for various control and automation systems.
This MOSFET combines advanced semiconductor technology with a practical, space-saving form factor, delivering the performance needed for next-generation portable, computing, and industrial applications.
- Power management circuits
- Computer and peripheral devices
- Portable and battery-powered devices
- Charging circuits and battery protection
- Channel Type: P Channel
- Drain-Source Voltage (Vds): -20V
- Continuous Drain Current (Id): -2.4A (3.2A)
- Drain-Source On-State Resistance (Rds(on)): 0.085 ohm
- Rds(on) Test Voltage: 4.5V
- Gate-Source Threshold Voltage (Max): 720mV
- Power Dissipation: 730mW
- Transistor Case Style: SOT-23
- Mounting Type: Surface Mount
- Number of Pins: 3
- Technology: -20V Trench for low RDS(ON)
- Gate Drive Voltage: Rated for -1.8V
- Halogen-Free: Yes
- Operating Junction Temperature Range: -55°C to 150°C
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Weight: 0.045 grams
- Drain Source On State Resistance: 0.085ohm
- Transistor Mounting: Surface Mount
- of Pins: 3Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
Documents
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