ONSEMI NTD25P03LT4G P-Channel Power MOSFET, Logic Level, 30V 25A TO-252
ONSEMI 30V 25A P-channel logic-level MOSFET in TO-252 package. Low Rds(on) of 0.08 ohm, AEC-Q101 qualified for motor control & power management.
The ONSEMI NTD25P03LT4G is a P-channel logic-level Power MOSFET engineered for high-efficiency, low-voltage switching applications. It is designed to deliver robust performance in demanding circuits where fast switching and high energy handling are critical, such as in motor drive control and advanced power management systems.
This MOSFET is characterised by an exceptionally low drain-source on-state resistance (Rds(on)) of just 0.08 ohm, which minimises conduction losses and improves overall system efficiency. Its ability to withstand high energy in avalanche and commutation modes makes it a reliable choice for protecting circuits from voltage transients.
A key feature is its integrated source-to-drain diode, which offers a fast recovery time comparable to a discrete fast recovery diode. This enhances performance in switching applications by reducing reverse recovery losses. The device is supplied in a compact, surface-mount TO-252 (DPAK) package, making it suitable for space-constrained PCB designs while still allowing for effective power dissipation.
Key Specifications & Features
- Channel Type: P-Channel
- Drain-Source Voltage (Vds): -30 V
- Continuous Drain Current (Id): 25 A
- Drain-Source On-State Resistance (Rds(on)): 0.08 Ω (tested at 5V)
- Gate-Source Threshold Voltage (Vgs(th) max): 1.6 V (logic level compatible)
- Maximum Power Dissipation: 75 W
- Package / Case: TO-252 (DPAK), 3-pin
- Mounting Type: Surface Mount
- Maximum Operating Junction Temperature: 150 °C
- Qualification: AEC-Q101 qualified for automotive applications
Ideal for designers requiring a compact, high-performance switching solution, this ONSEMI MOSFET provides the durability and efficiency needed for modern electronic power control.
- Motor Drive Control systems
- Power Management circuits
- Low voltage, high speed switching applications
- Applications requiring high energy avalanche withstand
- Channel Type: P Channel
- Drain Source Voltage (Vds): -30 V
- Continuous Drain Current (Id): 25 A
- Drain Source On-State Resistance (Rds(on)): 0.08 ohm
- Gate Source Threshold Voltage Max: 1.6 V
- Maximum Power Dissipation: 75 W
- Transistor Case Style: TO-252 (DPAK)
- Transistor Mounting: Surface Mount
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Qualification: AEC-Q101 qualified
- Weight: 0.46 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Drain Source On State Resistance: 0.08ohm
- Rds(on) Test Voltage: 5V
- Power Dissipation: 75W
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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