ONSEMI NPN General Purpose Bipolar Transistor 40V 600mA SOT-23

This NPN silicon bipolar junction transistor (BJT) from ONSEMI is designed for general-purpose applications. It is ideally suited for linear, lower power surface mount and switching applications, offering reliable performance for a wide range of electronic circuits.

Featuring a halogen-free and BFR-free construction, this transistor meets modern environmental standards. It is AEC-Q101 qualified and PPAP capable, making it highly reliable for demanding environments, particularly within the automotive sector.

Delivering a maximum collector-emitter voltage of 40V and a continuous collector current of 600mA, it offers efficient power handling. The device features a power dissipation of 225mW and a transition frequency of 300MHz. With a DC current gain (hFE) ranging from 35 to 300, it provides versatile performance for various circuit designs.

Housed in a compact SOT-23 case style with 3 pins, this surface mount device ensures straightforward PCB integration. It operates reliably up to a maximum temperature of 150°C. The product dimensions are 43mm in height, 33mm in width, and 15mm in depth, with a weight of just 0.091 grams.