ONSEMI NPN Bipolar BJT Transistor, 400V, 8A, 80W

The ONSEMI NPN Bipolar (BJT) Single Transistor is a robust electronic component designed for a variety of switching and amplification applications. Featuring a maximum collector-emitter voltage of 400V and a continuous collector current of 8A, this transistor is well-suited for medium to high-power circuits. It offers a power dissipation of 80W, ensuring reliable performance under demanding conditions.

Housed in a standard TO-220 case style, this through-hole mounting transistor features 3 pins for straightforward integration into your circuit boards. With a minimum DC current gain (hFE) of 40 and a transition frequency of 14MHz, it provides efficient signal processing and switching capabilities. The component operates effectively up to a maximum temperature of 150°C.

Key Specifications

• Polarity: NPN
• Max Collector Emitter Voltage: 400V
• Continuous Collector Current: 8A
• Power Dissipation: 80W
• Case Style: TO-220
• Mounting: Through Hole
• Pins: 3
• Transition Frequency: 14MHz
• Min DC Current Gain (hFE): 40
• Max Operating Temperature: 150°C
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 1g

This reliable ONSEMI transistor delivers consistent performance for your electronic projects, whether you are building power supplies, motor drives, or general-purpose amplifiers.