ONSEMI N Channel Power MOSFET 60V 12A 0.104ohm TO-252

The ONSEMI N Channel Power MOSFET is specifically designed for low voltage, high speed switching applications. This component is highly suitable for use in power supplies, converters, power motor controls, and bridge circuits, offering reliable performance in demanding environments.

Featuring a low drain source on state resistance of 0.104 ohm and a maximum gate source threshold voltage of 1.6V, this MOSFET ensures efficient power management. It also boasts a low diode reverse recovery time and lower reverse recovery stored charge, which contributes to faster and more efficient switching operations. The tight VSD further enhances its precision in circuit applications.

With a continuous drain current of 12A and a drain source voltage of 60V, this device is built to handle substantial power loads, featuring a power dissipation of 48W. It is supplied in a TO-252 (DPAK) surface mount case style with 4 pins, allowing for straightforward integration onto printed circuit boards.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 12A
• Drain Source On State Resistance: 0.104 ohm
• Rds(on) Test Voltage: 5V
• Gate Source Threshold Voltage Max: 1.6V
• Power Dissipation: 48W
• Operating Temperature Range: -55 to 175°C
• Transistor Case Style: TO-252 (DPAK)
• Mounting: Surface Mount
• Number of Pins: 4
• Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)
• Weight: 0.33 grams