
Onsemi N-channel power MOSFET rated 55 V, 75 A, in TO-220AB through-hole package. Suited to switching regulators and DC-DC converters.
Onsemi N-Channel Power MOSFET rated at 55 V and 75 A, built with advanced process technology for efficient power switching in demanding applications.
Overview
The ONSEMI HUF75339P3 is a 55 V N-channel UltraFET power MOSFET with an on-resistance of 0.012 Ω per silicon area, which helps minimise power loss and heat generation. Its robust design allows it to withstand high energy pulses in avalanche mode, supporting durability in stressful operating conditions. The integrated body diode has a very low reverse recovery time and stored charge, which helps reduce switching losses in high-frequency circuits.
Applications
This power MOSFET is suited to power management and control systems where efficiency is important. Typical uses include:
Package and Thermal Performance
Housed in a TO-220AB through-hole package, the device offers good thermal performance and straightforward mounting on printed circuit boards (PCBs) for prototyping or production. With a continuous drain current rating of 75 A and a maximum power dissipation of 200 W, it is built to handle significant electrical loads.
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