ONSEMI N Channel Power MOSFET, 500 V, 44 A, 0.12 ohm, TO-247

The ONSEMI General Purpose N Channel Power MOSFET is based on advanced planar stripe and DMOS technology. It is specifically tailored to reduce on-state resistance while providing superior switching performance and higher avalanche energy strength.

This SMPS series MOSFET features an enhanced body diode reverse recovery performance, achieved through precise lifetime control. With a reverse recovery time (trr) of less than 100ns and a reverse dv/dt immunity of 15V/ns, it significantly outperforms standard planar MOSFETs. This enhancement allows for the removal of additional components, improving overall system reliability in applications where body diode performance is critical.

Key Performance Benefits

• Low gate charge results in simple drive requirement
• Improved gate, avalanche, and high reapplied dv/dt ruggedness
• Reduced miller capacitance and low input capacitance
• Improved switching speed with low EMI
• 175°C rated junction temperature

Offering robust power dissipation of 750W and a continuous drain current of 44A, this through-hole TO-247 device provides reliable and efficient power management for a variety of demanding applications.